FDS6675BZ 6675B 6675 P-Channel PowerTrench MOSFET

This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance. This device is works well for Power Management and loads switching applications common in Notebook Computers and Portable Battery Packs.

Specification:

• Max rDS(on)=13milliohms at VGS = -10V, ID= -11A
• Max rDS(on)=21.8milliohms at VGS = -4.5V, ID= -9A
• Extended VGS range (-25V) for battery applications
• HBM ESD protection level of 5.4 KV typical 
• High-performance trench technology for extremely low RDS(on)
• High power and current handing capability

Datasheet:

https://bit.ly/2TdTo1E