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Leaky MOSFET

FDS6675BZ

FDS6675BZ

₱300.00 PHP
₱300.00 PHP
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Product Description

This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.

Features:

  • Max rDS(on)= 13mΩ at VGS = -10V, ID = -11A
  • Max rDS(on)= 21.8mΩ at VGS = -4.5V, ID = -9A
  • Extended VGS range (-25V) for battery applications 
  • HBMESD protection level of 5.4 KV typical (note 3)
  • High  performance  trench  technology  for  extremely  low  rDS(on)

https://pdf1.alldatasheet.com/datasheet-pdf/view/135587/FAIRCHILD/FDS6675BZ.html

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