P1403EV8 P-Channel MOSFET

P1403EV8  P-Channel MOSFET

Description:

rent2 Pulsed Drain Current1 , 2 TA = 2 5 °C TA = 70 °C ID IDM -12 -10 -65 Avalanche Current IAS 39 Avalanche Energy L = 0.1mH EAS 89 Power Dissipation TA = 25 °C TA = 70 °C PD 3 2 Operating Junction & Storage Tempera ture Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 Pulse width limited by.

Specification:

P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP - 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETER S/TEST CONDITIONS SYMBOL LIMITS Drai n-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Cur 

Datasheet:

https://bit.ly/2Fe0v58