Toshiba TPCA8A10-H 2.9m N-Channel MOSFET DFN5x6

MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)

 Applications

• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Equipment

 Features

• Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max)
• High-speed switching
• Small gate charge: QSW = 12 nC (typ.)
• Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V)
• Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

TPCA